Principal Technology Development Engineer – GaN / Process Integration

kore1 • United States

Relocation

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AI Summary

Seeking a Principal Technology Development Engineer for a leading semiconductor foundry in Bloomington, MN. This senior-level role focuses on developing, optimizing, and qualifying advanced semiconductor technologies, including GaN-on-Silicon HEMT power devices. Requires strong FEOL background, device physics understanding, and cross-functional process integration experience.

Key Highlights

Lead development, transfer, optimization, and documentation of semiconductor process flows.

Integrate process sequences to meet targeted device electrical, reliability, and manufacturability requirements.

Collaborate across Process, Device, Integration, and Manufacturing teams, providing technical leadership.

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Key Responsibilities

Lead and contribute to the development, transfer, optimization, and documentation of semiconductor process flows and technology platforms.

Develop and integrate process sequences capable of achieving targeted device electrical, reliability, and manufacturability requirements.

Design and execute experiments to identify optimal process parameters and improve device performance.

Analyze electrical test, in-process measurement, cross-sectional, inspection, and other characterization data to identify opportunities for process optimization.

Partner closely with Process Engineering teams across key modules including lithography, etch, thin films, CMP, epitaxy/MOCVD, and related FEOL processes.

Support initial test-chip and technology-transfer lots, troubleshoot integration issues, and drive toward successful manufacturing introduction.

Work with Device Engineering to understand device requirements and translate electrical performance targets into process requirements.

Contribute to layout rules, test structures, and test-chip mask-set development used to characterize new technologies and process dependencies.

Evaluate new semiconductor technologies and potential technology-transfer opportunities.

Interpret failure-analysis results and help determine process-related root causes.

Provide technical leadership and collaborate across Process, Device, Integration, Manufacturing, and other engineering teams.

Communicate development status, technical findings, risks, and recommendations to senior leadership and external customers.

Mentor and provide technical guidance to less-experienced engineers.

Technical Skills Required

Semiconductor Process Integration Device Physics FEOL

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Benefits & Perks

Relocation assistance

Medical insurance

Dental insurance

Vision insurance

Disability insurance

Life insurance

401(k) with company match

Paid time off

Annual bonus

Tuition reimbursement

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Nice to Have

Experience with GaN-on-Silicon HEMT power devices and/or III-V semiconductor technologies.

Knowledge of III-V nitride device physics.

Process integration experience with CMOS, BCD/BCDMOS, discrete MOSFETs, IGBTs, or other power semiconductor technologies.

Experience with process and device simulation/TCAD.

Experience with Design of Experiments (DOE) and semiconductor data-analysis tools such as JMP or Spotfire.

Experience with failure-analysis techniques, reliability, power packaging, or backend semiconductor processes.

Experience developing Process, Technology, or Design FMEAs.

Experience mentoring or technically leading other engineers.

Job Description

Job Title: Principal Technology Development Engineer – GaN / Process Integration

Description & Requirements:

This position is onsite in Bloomington, MN

Ability and willingness to relocate to the Bloomington, Minnesota area. (relocation assistance available.)

KORE1, a nationwide provider of staffing and recruiting solutions, is seeking a Principal Technology Development Engineer for a leading U.S.-based semiconductor foundry in Bloomington, Minnesota. (Relocation assistance available.)

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